Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100875
Title: Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
Authors: Liu, Juqing
Yin, Zongyou
Cao, Xiehong
Zhao, Fei
Wang, Lianhui
Huang, Wei
Zhang, Hua
Keywords: DRNTU::Engineering::Materials
Issue Date: 2013
Source: Liu, J., Yin, Z., Cao, X., Zhao, F., Wang, L., Huang, W., et al. (2013). Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices. Advanced Materials, 25(2), 233-238.
Series/Report no.: Advanced materials
Abstract: A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.
URI: https://hdl.handle.net/10356/100875
http://hdl.handle.net/10220/18985
ISSN: 0935-9648
DOI: 10.1002/adma.201203349
Rights: © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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