Please use this identifier to cite or link to this item:
Title: Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices
Authors: Liu, Juqing
Yin, Zongyou
Cao, Xiehong
Zhao, Fei
Wang, Lianhui
Huang, Wei
Zhang, Hua
Keywords: DRNTU::Engineering::Materials
Issue Date: 2013
Source: Liu, J., Yin, Z., Cao, X., Zhao, F., Wang, L., Huang, W., et al. (2013). Fabrication of flexible, all-reduced graphene oxide non-volatile memory devices. Advanced Materials, 25(2), 233-238.
Series/Report no.: Advanced materials
Abstract: A flexible, all reduced graphene oxide non-volatile memory device, with lightly reduced GO as an active layer and highly reduced GO as both top and bottom electrodes, is fabricated by a full-solution process and its performance is characterized. It provides a convenient method to construct other all-carbon devices.
ISSN: 0935-9648
DOI: 10.1002/adma.201203349
Rights: © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

Citations 1

Updated on Dec 1, 2022

Web of ScienceTM
Citations 1

Updated on Dec 6, 2022

Page view(s) 20

Updated on Dec 6, 2022

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.