Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100949
Title: Trap levels in graphene oxide : a thermally stimulated current study
Authors: Kajen, R. S.
Pey, K. L.
Vijila, C.
Jaiswal, M.
Saravanan, S.
Ng, A. M. H.
Wong, C. P.
Loh, K. P.
Chandrasekhar, Natarajan
Keywords: DRNTU::Engineering::Mathematics and analysis::Simulations
Issue Date: 2012
Source: Kajen, R. S., Chandrasekhar, N., Pey, K. L., Vijila, C., Jaiswal, M., Saravanan, S., et al. (2012). Trap Levels in Graphene Oxide: A Thermally Stimulated Current Study. ECS Solid State Letters, 2(2), M17-M19.
Series/Report no.: ECS solid state letters
Abstract: We report thermally stimulated current (TSC) experiments on graphene oxide (GO) to study the effects of various defect levels near the GO Fermi level. The TSC peaks are ascribed to detrapping from defect levels to the GO hopping transport energy level, and are found to be in agreement with the GO density of states reported in the literature. This work will be useful in evaluating the use of GO in memory/dielectric/barrier applications.
URI: https://hdl.handle.net/10356/100949
http://hdl.handle.net/10220/18598
DOI: 10.1149/2.006302ssl
Rights: © 2012 The Electrochemical Society. This paper was published in ECS Solid State Letters and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1149/2.006302ssl].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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