Composition-tunable vertically aligned CdSxSe1-x nanowire arrays via van der Waals epitaxy : investigation of optical properties and photocatalytic behavior

Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/100997

Title:	Composition-tunable vertically aligned CdSxSe1-x nanowire arrays via van der Waals epitaxy : investigation of optical properties and photocatalytic behavior
Authors:	Pan, Jun Utama, Muhammad Iqbal Bakti Zhang, Qing Liu, Xinfeng Peng, Bo Wong, Lai Mun Sum, Tze Chien Wang, Shijie Xiong, Qihua
Issue Date:	2012
Source:	Pan, J., Utama, M. I. B., Zhang, Q., Liu, X., Peng, B., Wong, L. M., et al. (2012). Composition-Tunable Vertically Aligned CdSxSe1-x Nanowire Arrays via van der Waals Epitaxy: Investigation of Optical Properties and Photocatalytic Behavior. Advanced Materials, 24(30), 4151-4156.
Series/Report no.:	Advanced materials
Abstract:	The growth of CdSxSe1-x (0 < x < 1) nanowire arrays are demonstrated for the first time with the vapor transport method on a muscovite substrate. The results of our characterizations show that our facile growth method enables accurate composition adjustability for the modulation of the crystalline, optical, and photocatalytic properties of the alloy nanowire arrays.
URI:	https://hdl.handle.net/10356/100997 http://hdl.handle.net/10220/10449
ISSN:	1521-4095
DOI:	10.1002/adma.201104996
Schools:	School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences
Rights:	© 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission:	none
Fulltext Availability:	No Fulltext
Appears in Collections:	EEE Journal Articles SPMS Journal Articles

73

Updated on Mar 23, 2025

68

Updated on Oct 25, 2023

845

Updated on Mar 27, 2025

Check