Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101045
Title: Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals
Authors: Liu, Yang
Chen, Tupei
Lau, Hon Wu
Wong, Jen It
Ding, Liang
Zhang, Sam
Fung, Stevenson Hon Yuen
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2006
Source: Liu, Y., Chen, T., Lau, H. W., Wong, J. I., Ding, L., Zhang, S., et al. (2006). Charging effect on current conduction in aluminum nitride thin films containing Al nanocrystals. Applied physics letters, 89, 1-3.
Series/Report no.: Applied physics letters
Abstract: The presence of Al nanocrystals (nc-Al) in AlN thin films is found to enhance the current conduction of the thin film system greatly due to the formation of tunneling paths of nc-Al arrays, and the nc-Al/AlN system shows a quasi-two-dimensional transport following a power law. However, charge trapping in nc-Al reduces the current conduction because of the increase in the tunneling resistance and/or the breaking of some tunneling paths due to Coulomb blockade effect. The current conduction also evolves with a trend towards one-dimensional transport due to the breaking of some transverse tunneling paths as a result of the charge trapping.
URI: https://hdl.handle.net/10356/101045
http://hdl.handle.net/10220/6411
ISSN: 0003-6951
DOI: 10.1063/1.2354418
Rights: Applied Physics Letters © copyright 2006 American Institute of Physics. The journal's website is located at http://apl.aip.org/applab/v89/i12/p123101_s1?isAuthorized=no
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.