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Title: InGaN/GaN light-emitting diode with a polarization tunnel junction
Authors: Zhang, Zi-Hui
Tan, Swee Tiam
Kyaw, Zabu
Ji, Yun
Liu, Wei
Ju, Zhengang
Hasanov, Namig
Sun, Xiaowei
Demir, Hilmi Volkan
Issue Date: 2013
Source: Zhang, Z.-H., Tan, S. T., Kyaw, Z., Ji, Y., Liu, W., Ju, Z., et al. (2013). InGaN/GaN light-emitting diode with a polarization tunnel junction. Applied physics letters, 102(19).
Series/Report no.: Applied physics letters
Abstract: We report InGaN/GaN light-emitting diodes (LED) comprising in situ integrated p+-GaN/InGaN/n+-GaN polarization tunnel junctions. Improved current spreading and carrier tunneling probability were obtained in the proposed device architecture, leading to the enhanced optical output power and external quantum efficiency. Compared to the reference InGaN/GaN LEDs using the conventional p+/n+ tunnel junction, these devices having the polarization tunnel junction show a reduced forward bias, which is attributed to the polarization induced electric fields resulting from the in-plane biaxial compressive strain in the thin InGaN layer sandwiched between the p+-GaN and n+-GaN layers.
ISSN: 0003-6951
DOI: 10.1063/1.4806978
Rights: © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
SPMS Journal Articles

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