Please use this identifier to cite or link to this item:
|Title:||Flexible nanoscale memory device based on resistive switching in nickel oxide thin film||Authors:||Yu, Q.
Hu, S. G.
Deng, L. J.
Lim, Wei Meng
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Yu, Q., Lim, W. M., Hu, S. G., Chen, T., Deng, L. J., & Liu, Y. (2012). Flexible nanoscale memory device based on resistive switching in nickel oxide thin film. Nanoscience and nanotechnology letters, 4(9), 940-943(4).||Series/Report no.:||Nanoscience and nanotechnology letters||Abstract:||In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of ∼103 between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or a voltage sweeping. The memory window can be maintained in repetitive programming/erase cycles (at least 120 cycles have been demonstrated in the present experiment), showing a good endurance. In addition, in the time frame (104 s) of the retention experiment, no significant degradation in the memory window is observed, demonstrating a good retention capability.||URI:||https://hdl.handle.net/10356/101075
|DOI:||10.1166/nnl.2012.1398||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.