Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101075
Title: Flexible nanoscale memory device based on resistive switching in nickel oxide thin film
Authors: Yu, Q.
Hu, S. G.
Deng, L. J.
Liu, Y.
Lim, Wei Meng
Chen, Tupei
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Yu, Q., Lim, W. M., Hu, S. G., Chen, T., Deng, L. J., & Liu, Y. (2012). Flexible nanoscale memory device based on resistive switching in nickel oxide thin film. Nanoscience and nanotechnology letters, 4(9), 940-943(4).
Series/Report no.: Nanoscience and nanotechnology letters
Abstract: In this work, a flexible memory device based on resistive switching in a NiO thin film has been demonstrated. A large memory window with the resistance ratio of ∼103 between the high-resistance state and the low-resistance state is observed. A memory state can be altered by either voltage pulses or a voltage sweeping. The memory window can be maintained in repetitive programming/erase cycles (at least 120 cycles have been demonstrated in the present experiment), showing a good endurance. In addition, in the time frame (104 s) of the retention experiment, no significant degradation in the memory window is observed, demonstrating a good retention capability.
URI: https://hdl.handle.net/10356/101075
http://hdl.handle.net/10220/13694
DOI: 10.1166/nnl.2012.1398
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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