Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101083
Title: Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
Authors: Zhang, Junbin
Syamal, Binit
Zhou, Xing
Chiah, Siau Ben
Zhou, Hongtao
Yuan, Li
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Zhou, X., Zhang, J., Syamal, B., Chiah, S. B., Zhou, H., & Yuan, L. (2012). Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1-4.
Abstract: This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism. It is shown that through the URM of the 2DEG based on triangular well approximation and surface-potential based DD transport, a CM for generic metal-insulator-semiconductor (MIS) HEMTs can be developed, which is scalable over device physical and structural parameters.
URI: https://hdl.handle.net/10356/101083
http://hdl.handle.net/10220/16311
DOI: 10.1109/ICSICT.2012.6467682
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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