Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism

Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101083

Title:	Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism
Authors:	Zhang, Junbin Syamal, Binit Zhou, Xing Chiah, Siau Ben Zhou, Hongtao Yuan, Li
Keywords:	DRNTU::Engineering::Electrical and electronic engineering
Issue Date:	2012
Source:	Zhou, X., Zhang, J., Syamal, B., Chiah, S. B., Zhou, H., & Yuan, L. (2012). Unified regional modeling of GaN HEMTs with the 2DEG and DD formalism. 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT), pp.1-4.
Abstract:	This paper presents the unified regional modeling (URM) approach to developing a compact model (CM) for GaN-based high electron mobility transistors (HEMTs) based on the two-dimensional electron gas (2DEG) and drift-diffusion (DD) formalism. It is shown that through the URM of the 2DEG based on triangular well approximation and surface-potential based DD transport, a CM for generic metal-insulator-semiconductor (MIS) HEMTs can be developed, which is scalable over device physical and structural parameters.
URI:	https://hdl.handle.net/10356/101083 http://hdl.handle.net/10220/16311
DOI:	10.1109/ICSICT.2012.6467682
Fulltext Permission:	none
Fulltext Availability:	No Fulltext
Appears in Collections:	EEE Conference Papers

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