Please use this identifier to cite or link to this item:
Title: Vapor–liquid–solid growth of endotaxial semiconductor nanowires
Authors: Li, Shaozhou
Huang, Xiao
Liu, Qing
Cao, Xiehong
Huo, Fengwei
Zhang, Hua
Gan, Chee Lip
Issue Date: 2012
Source: Li, S., Huang, X., Lui, Q., Cao, X., Huo, F., Zhang, H., et al. (2012). Vapor–liquid–solid growth of endotaxial semiconductor nanowires. Nano Letters, 12(11), 5565-5570.
Series/Report no.: Nano letters
Abstract: Free-standing and in-plane lateral nanowires (NWs) grown by the vapor–liquid–solid (VLS) process have been widely reported. Herein, we demonstrate that the VLS method can be extended to the synthesis of horizontally aligned semiconductor NWs embedded in substrates. Endotaxial SiGe NWs were grown in silicon substrates by tuning the directional movement of the catalyst in the substrates. The location of the SiGe NWs can be controlled by the SiO2 pattern on the silicon surface. By varying the growth conditions, the proportion of Ge in the obtained NWs can also be tuned. This approach opens up an opportunity for the spatial control of the NW growth in substrates and can potentially broaden the applications of NWs in new advanced fields.
DOI: 10.1021/nl3025196
Rights: © 2012 American Chemical Society.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles


Updated on Jun 18, 2020


Updated on Jan 17, 2021

Page view(s)

Updated on Jan 18, 2021

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.