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Title: Emulating the Ebbinghaus forgetting curve of the human brain with a NiO-based memristor
Authors: Liu, Z.
Yu, Q.
Deng, L. J.
Hu, S. G.
Liu, Y.
Yin, Y.
Chen, Tupei
Hosaka, Sumio
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Hu, S. G., Liu, Y., Chen, T., Liu, Z., Yu, Q., Deng, L. J., et al. (2013). Emulating the Ebbinghaus forgetting curve of the human brain with a NiO-based memristor. Applied physics letters, 103(13), 133701-.
Series/Report no.: Applied physics letters
Abstract: The well-known Ebbinghaus forgetting curve, which describes how information is forgotten over time, can be emulated using a NiO-based memristor with conductance that decreases with time after the application of electrical pulses. Here, the conductance is analogous to the memory state, while each electrical pulse represents a memory stimulation or learning event. The decrease in the conductance with time depends on the stimulation parameters, including pulse height and width and the number of pulses, which emulates memory loss behavior well in that the time taken for the memory to be lost depends on how the information is learned.
ISSN: 0003-6951
DOI: 10.1063/1.4822124
Schools: School of Electrical and Electronic Engineering 
Rights: © 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI:  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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