Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101290
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dc.contributor.authorGoolaup, Sarjoosingen
dc.contributor.authorLew, Wen Siangen
dc.contributor.authorPurnama, Indraen
dc.contributor.authorSekhar, Murapaka Chandraen
dc.contributor.authorLiu, Y. P.en
dc.contributor.authorZhou, T. J.en
dc.contributor.authorWong, S. K.en
dc.date.accessioned2014-01-03T04:24:20Zen
dc.date.accessioned2019-12-06T20:36:10Z-
dc.date.available2014-01-03T04:24:20Zen
dc.date.available2019-12-06T20:36:10Z-
dc.date.copyright2013en
dc.date.issued2013en
dc.identifier.citationLiu, Y. P., Goolaup, S., Lew, W. S., Purnama, I., Sekhar, M. C., Zhou, T. J., et al. (2013). Excitonic bandgap dependence on stacking configuration in four layer graphene. Applied physics letters, 103(16), 163108-.en
dc.identifier.issn0003-6951en
dc.identifier.urihttps://hdl.handle.net/10356/101290-
dc.description.abstractDifferent crystallographic stacking configurations in graphene provide an additional degree of freedom in the electronic structure. We have conducted systematic investigations of the transport properties of ABAB- and ABCA-stacked four-layer graphene. Our results reveal that ABAB and ABCA graphene exhibit markedly different properties as functions of both temperature and magnetic field. The temperature-dependant resistance measurement reveals that the excitonic gap of ABCA stacked graphene increases as a function of temperature, while for ABAB, a shrinking excitonic gap configuration is observed.en
dc.language.isoenen
dc.relation.ispartofseriesApplied physics lettersen
dc.rights© 2013 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4825263]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Science::Physicsen
dc.titleExcitonic bandgap dependence on stacking configuration in four layer grapheneen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1063/1.4825263en
dc.description.versionPublished versionen
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