Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101299
Full metadata record
DC FieldValueLanguage
dc.contributor.authorFan, Weijunen
dc.date.accessioned2014-01-07T02:34:25Zen
dc.date.accessioned2019-12-06T20:36:21Z-
dc.date.available2014-01-07T02:34:25Zen
dc.date.available2019-12-06T20:36:21Z-
dc.date.copyright2013en
dc.date.issued2013en
dc.identifier.citationFan, W. (2013). Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wells. Journal of applied physics, 114(18), 183106-.en
dc.identifier.issn0021-8979en
dc.identifier.urihttps://hdl.handle.net/10356/101299-
dc.identifier.urihttp://hdl.handle.net/10220/18409en
dc.description.abstractBand structures of tensile strained and n+ doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the Γ and L conduction subbands are obtained. The effects of tensile strain and n+ doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from Γ to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153 cm−1 can be achieved for the Ge/Ge0.986Si0.014 QW with tensile strain of 1.61% and n-type doping concentration of 30 × 10^18 cm−3.en
dc.language.isoenen
dc.relation.ispartofseriesJournal of applied physicsen
dc.rights© 2013 AIP Publishing LLC. This paper was published in Journal of Applied Physics and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4831750]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Science::Physicsen
dc.titleTensile-strain and doping enhanced direct bandgap optical transition of n+ doped Ge/GeSi quantum wellsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doihttp://dx.doi.org/10.1063/1.4831750en
dc.description.versionPublished versionen
item.grantfulltextopen-
item.fulltextWith Fulltext-
Appears in Collections:EEE Journal Articles
Files in This Item:
File Description SizeFormat 
Tensile-strain and doping enhanced direct bandgap optical transition of n+ doped.pdf1.23 MBAdobe PDFThumbnail
View/Open

Google ScholarTM

Check

Altmetric

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.