Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101316
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dc.contributor.authorVexler, M. I.en
dc.contributor.authorTyaginov, S. E.en
dc.contributor.authorIllarionov, Yu. Yu.en
dc.contributor.authorSing, Yew Kwang.en
dc.contributor.authorShenp, Ang Diing.en
dc.contributor.authorFedorov, V. V.en
dc.contributor.authorIsakov, D. V.en
dc.date.accessioned2013-10-23T07:14:20Zen
dc.date.accessioned2019-12-06T20:36:38Z-
dc.date.available2013-10-23T07:14:20Zen
dc.date.available2019-12-06T20:36:38Z-
dc.date.copyright2013en
dc.date.issued2013en
dc.identifier.citationVexler, M. I., Tyaginov, S. E., Illarionov, Y. Y., Sing, Y. K., Shenp, A. D., Fedorov, V. V.,& Isakov, D. V. (2013). A general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structures. Semiconductors, 47(5), 686-694.en
dc.identifier.urihttps://hdl.handle.net/10356/101316-
dc.identifier.urihttp://hdl.handle.net/10220/16733en
dc.description.abstractThe algorithm is suggested for calculating the I–V characteristics of a voltage- or current-controlled metal-tunnel-thin insulator-semiconductor system. The basic underlying physical models are discussed. Applicability of the algorithm is confirmed by a comparison of the simulation results with the measurement data obtained by the authors and borrowed from the literature, for several different structures. The presented information is supposed to suffice for calculating the electrical characteristics of the investigated structures with the various combinations of materials: metal or polysilicon gate, single-layer or stacked insulator, and semiconductor with any doping type and level.en
dc.language.isoenen
dc.relation.ispartofseriesSemiconductorsen
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductorsen
dc.titleA general simulation procedure for the electrical characteristics of metal-insulator-semiconductor tunnel structuresen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1134/S1063782613050230en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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