Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/101335
Title: | Electronic structures and transport properties of fluorinated boron nitride nanoribbons | Authors: | Zeng, Jing Chen, Ke-Qiu Sun, Changqing |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Zeng, J., Chen, K.-Q., Sun, C. (2012). Electronic structures and transport properties of fluorinated boron nitride nanoribbons. Physical chemistry chemical physics, 14(22), 8032-8037. | Series/Report no.: | Physical chemistry chemical physics | Abstract: | By applying the nonequilibrium Green's functions and the density-functional theory, we investigate the electronic structures and transport properties of fluorinated zigzag-edged boron nitride nanoribbons. The results show that the transition between half-metal and semiconductor in zigzag-edged boron nitride nanoribbons can be realized by fluorination at different sites or by the change of the fluorination level. Moreover, the negative differential resistance and varistor-type behaviors can also be observed in such fluorinated zigzag-edged boron nitride nanoribbon devices. Therefore, the fluorination of zigzag-edged boron nitride nanoribbons will provide the possibilities for a multifunctional molecular device design. | URI: | https://hdl.handle.net/10356/101335 http://hdl.handle.net/10220/11071 |
DOI: | 10.1039/C2CP23937J | Schools: | School of Electrical and Electronic Engineering | Rights: | © 2012 Then Owner Societies. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
SCOPUSTM
Citations
10
52
Updated on Mar 27, 2024
Web of ScienceTM
Citations
10
50
Updated on Oct 26, 2023
Page view(s) 50
555
Updated on Mar 27, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.