Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101343
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dc.contributor.authorLi, Jinlingen
dc.contributor.authorChang, Jing-Jingen
dc.contributor.authorTan, Huei Shuanen
dc.contributor.authorJiang, Huien
dc.contributor.authorChen, Xiaodongen
dc.contributor.authorChen, Zhikuanen
dc.contributor.authorZhang, Jieen
dc.contributor.authorWu, Jishanen
dc.date.accessioned2013-07-10T07:07:58Zen
dc.date.accessioned2019-12-06T20:36:56Z-
dc.date.available2013-07-10T07:07:58Zen
dc.date.available2019-12-06T20:36:56Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationLi, J., Chang, J.-J., Tan, H. S., Jiang, H., Chen, X., Chen, Z., et al. (2012). Disc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistors. Chemical Science, 3(3), 846-850.en
dc.identifier.urihttps://hdl.handle.net/10356/101343-
dc.identifier.urihttp://hdl.handle.net/10220/11116en
dc.description.abstractLarge disc-like ovalene diimides (ODI and ODI-CN) were prepared for the first time mainly via Diels–Alder cycloaddition reactions at the bay regions of bisanthene. The CN-substituted ovalene diimide (ODI-CN) exhibited typical n-type semiconducting behaviour in solution processing OFET devices, showing high electron mobility up to 1.0 cm2 V−1 s−1 in nitrogen atmosphere and 0.51 cm2 V−1 s−1 in air together with good device stability.en
dc.language.isoenen
dc.relation.ispartofseriesChemical scienceen
dc.rights© 2012 The Royal Society of Chemistry.en
dc.titleDisc-like 7, 14-dicyano-ovalene-3,4:10,11-bis(dicarboximide) as a solution-processible n-type semiconductor for air stable field-effect transistorsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen
dc.identifier.doi10.1039/c1sc00739den
item.grantfulltextnone-
item.fulltextNo Fulltext-
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