Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101350
Title: Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures
Authors: Gui, D.
Ng, Chi Yung
Chen, Tupei
Liu, Yang
Tse, Man Siu
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2005
Source: Gui, D., Ng, C. Y., Chen, T. P., Liu, Y., & Tse, M. S. (2005). Modulation of capacitance magnitude by charging/discharging in silicon nanocrystals distributed throughout the gate oxide in MOS structures. Electrochemical and Solid State Letters, 8(1), G8-G10.
Series/Report no.: Electrochemical and solid state letters
Abstract: In this work, charge trapping in silicon nanocrystals (nc-Si) distributed throughout the gate oxide in a metal oxide semiconductor (MOS) structure has been studied. This situation is different from the conventional one with nc-Si confined in a narrow layer embedded in the gate oxide. In the latter, charge trapping in nc-Si leads to a shift in capacitance-voltage characteristic (i.e., a change in the flat-band voltage). In contrast, in the former the charge trapping leads to a dramatic reduction in the MOS capacitance. The original capacitance could be recovered after the release of the trapped charges by a small bias, UV light illumination, or low-temperature thermal annealing.
URI: https://hdl.handle.net/10356/101350
http://hdl.handle.net/10220/6428
ISSN: 1099-0062
DOI: 10.1149/1.1830392
Rights: Electrochemical and Solid State Letters © copyright 2005 Electrochemical Society. The journal's website is located at http://dx.doi.org.ezlibproxy1.ntu.edu.sg/10.1149/1.1830392
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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