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Title: Quantum dot-doped porous silicon metal–semiconductor metal photodetector
Authors: Hsiao, Vincent K. S.
Chou, Chia-Man
Cho, Hsing-Tzu
Yong, Ken-Tye
Law, Wing-Cheung
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Issue Date: 2012
Source: Chou, C. M., Cho, H. T., Hsiao, V. K. S., Yong, K. T., & Law, W. C. (2012). Quantum dot-doped porous silicon metal–semiconductor metal photodetector. Nanoscale research letters, 7(1), 291-294.
Series/Report no.: Nanoscale research letters
Abstract: In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal–semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1.77 eV) and QDs (approximately 1.91 eV) facilitates the photoinduced electron transfer from QDs to PS whereby enhancing the photoresponsivity. We also showed that the photoresponsitivity of QD/PS hybrid-MSM photodetector depends on the number of layer coatings of QDs and the pore sizes of PS.
ISSN: 1556-276X
DOI: 10.1186/1556-276X-7-291
Rights: © 2012 The Authors. This paper was published in Nanoscale Research Letters and is made available as an electronic reprint (preprint) with permission of the authors. The paper can be found at the following official DOI: [].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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