Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101420
Full metadata record
DC FieldValueLanguage
dc.contributor.authorHsiao, Vincent K. S.en
dc.contributor.authorChou, Chia-Manen
dc.contributor.authorCho, Hsing-Tzuen
dc.contributor.authorYong, Ken-Tyeen
dc.contributor.authorLaw, Wing-Cheungen
dc.date.accessioned2014-01-22T05:45:54Zen
dc.date.accessioned2019-12-06T20:38:28Z-
dc.date.available2014-01-22T05:45:54Zen
dc.date.available2019-12-06T20:38:28Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationChou, C. M., Cho, H. T., Hsiao, V. K. S., Yong, K. T., & Law, W. C. (2012). Quantum dot-doped porous silicon metal–semiconductor metal photodetector. Nanoscale research letters, 7(1), 291-294.en
dc.identifier.issn1556-276Xen
dc.identifier.urihttps://hdl.handle.net/10356/101420-
dc.description.abstractIn this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal–semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1.77 eV) and QDs (approximately 1.91 eV) facilitates the photoinduced electron transfer from QDs to PS whereby enhancing the photoresponsivity. We also showed that the photoresponsitivity of QD/PS hybrid-MSM photodetector depends on the number of layer coatings of QDs and the pore sizes of PS.en
dc.language.isoenen
dc.relation.ispartofseriesNanoscale research lettersen
dc.rights© 2012 The Authors. This paper was published in Nanoscale Research Letters and is made available as an electronic reprint (preprint) with permission of the authors. The paper can be found at the following official DOI: [http://dx.doi.org/10.1186/1556-276X-7-291].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Semiconductorsen
dc.titleQuantum dot-doped porous silicon metal–semiconductor metal photodetectoren
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1186/1556-276X-7-291en
dc.description.versionPublished versionen
item.fulltextWith Fulltext-
item.grantfulltextopen-
Appears in Collections:EEE Journal Articles
Files in This Item:
File Description SizeFormat 
Quantum dot-doped porous silicon metal semiconductor metal photodetector.pdf1.68 MBAdobe PDFThumbnail
View/Open

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.