Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101467
Title: A 9.87 nW 1 kS/s 8.7 ENOB SAR ADC for implantable epileptic seizure detection microsystems
Authors: Do, Anh Tuan
Lam, Chun Kit
Tan, Yung Sern
Yeo, Kiat Seng
Cheong, Jia Hao
Yao, Lei
Tan, Meng Tong
Je, Minkyu
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Do, A. T., Lam, C. K., Tan, Y. S., Yeo, K. S., Cheong, J. H., Yao, L., Tan, M. T., & Je, M. (2012). A 9.87 nW 1 kS/s 8.7 ENOB SAR ADC for implantable epileptic seizure detection microsystems. 2012 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), pp.1-4.
Conference: IEEE Asia Pacific Conference on Circuits and Systems (2012 : Kaohsiung, Taiwan)
Abstract: This paper presents an ultra low-power SAR ADC in 0.18 μm CMOS technology for epileptic seizure detection applications. The ADC is powered by a single supply voltage of both analog and digital circuits to avoid using the level-shifters. A latched comparator is used to quickly generate the comparison results while consuming no DC current. Split-cap architecture with an attenuation cap is used to minimize area and to further reduce the power consumption. A smaller-than-unit capacitor is used at the end of the least significant bit array to mitigate the negative impact of the parasitic components on the linearity of the capacitors array. As a result, both DNL/INL and SNDR of the ADC is improved. Our post-layout simulation shows that at 1 V supply, 1 kS/s the proposed SAR archives 8.7 ENOB while consuming only 9.87 nW. This yields an FOM of 23.7 fJ/conversion-step. Its leakage power consumption is 1.46 nW.
URI: https://hdl.handle.net/10356/101467
http://hdl.handle.net/10220/16334
DOI: 10.1109/APCCAS.2012.6418956
Schools: School of Electrical and Electronic Engineering 
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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