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https://hdl.handle.net/10356/101467
Title: | A 9.87 nW 1 kS/s 8.7 ENOB SAR ADC for implantable epileptic seizure detection microsystems | Authors: | Do, Anh Tuan Lam, Chun Kit Tan, Yung Sern Yeo, Kiat Seng Cheong, Jia Hao Yao, Lei Tan, Meng Tong Je, Minkyu |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Do, A. T., Lam, C. K., Tan, Y. S., Yeo, K. S., Cheong, J. H., Yao, L., Tan, M. T., & Je, M. (2012). A 9.87 nW 1 kS/s 8.7 ENOB SAR ADC for implantable epileptic seizure detection microsystems. 2012 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), pp.1-4. | Conference: | IEEE Asia Pacific Conference on Circuits and Systems (2012 : Kaohsiung, Taiwan) | Abstract: | This paper presents an ultra low-power SAR ADC in 0.18 μm CMOS technology for epileptic seizure detection applications. The ADC is powered by a single supply voltage of both analog and digital circuits to avoid using the level-shifters. A latched comparator is used to quickly generate the comparison results while consuming no DC current. Split-cap architecture with an attenuation cap is used to minimize area and to further reduce the power consumption. A smaller-than-unit capacitor is used at the end of the least significant bit array to mitigate the negative impact of the parasitic components on the linearity of the capacitors array. As a result, both DNL/INL and SNDR of the ADC is improved. Our post-layout simulation shows that at 1 V supply, 1 kS/s the proposed SAR archives 8.7 ENOB while consuming only 9.87 nW. This yields an FOM of 23.7 fJ/conversion-step. Its leakage power consumption is 1.46 nW. | URI: | https://hdl.handle.net/10356/101467 http://hdl.handle.net/10220/16334 |
DOI: | 10.1109/APCCAS.2012.6418956 | Schools: | School of Electrical and Electronic Engineering | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Conference Papers |
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