Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101572
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dc.contributor.authorZhang, Qien
dc.contributor.authorShen, Zhongxiangen
dc.contributor.authorWang, Jianpengen
dc.contributor.authorLee, Kian Sengen
dc.date.accessioned2013-10-10T02:14:30Zen
dc.date.accessioned2019-12-06T20:40:44Z-
dc.date.available2013-10-10T02:14:30Zen
dc.date.available2019-12-06T20:40:44Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationZhang, Q., Shen, Z., Wang, J., & Lee, K. S. (2012). Design of a switchable microwave absorber. IEEE Antennas and Wireless Propagation Letters, 11, 1158-1161.en
dc.identifier.urihttps://hdl.handle.net/10356/101572-
dc.description.abstractA novel circuit analog absorber is presented in this letter, which consists of three layers: a complex impedance surface, a dielectric layer containing p-i-n diodes, and a conducting ground plane. The complex impedance surface is a periodic array of unit cells with lumped elements. p-i-n diodes are employed to control the RF signal path to realize different effective thicknesses, which results in different absorbing frequencies. An example is fabricated and tested to demonstrate that the proposed absorber can achieve two switchable operations, one of which covers from 0.85 to 1.88 GHz with a -10-dB reflection coefficient, and the other from 2.66 to 5.23 GHz.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE Antennas and Wireless Propagation Lettersen
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleDesign of a switchable microwave absorberen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1109/LAWP.2012.2220115en
item.fulltextNo Fulltext-
item.grantfulltextnone-
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