Please use this identifier to cite or link to this item:
https://hdl.handle.net/10356/101663
Title: | A hole accelerator for InGaN/GaN light-emitting diodes | Authors: | Zhang, Zi-Hui Liu, Wei Tan, Swee Tiam Zhang, Yiping Ji, Yun Wang, Liancheng Zhu, Binbin Lu, Shunpeng Zhang, Xueliang Hasanov, Namig Sun, Xiao Wei Demir, Hilmi Volkan |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering::Electric power | Issue Date: | 2014 | Source: | Zhang, Z.-H., Liu, W., Tan, S. T., Ji, Y., Wang, L., Zhu, B., et al. (2014). A hole accelerator for InGaN/GaN light-emitting diodes. Applied Physics Letters, 105(15), 153503-. | Series/Report no.: | Applied physics letters | Abstract: | The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED. | URI: | https://hdl.handle.net/10356/101663 http://hdl.handle.net/10220/24198 |
DOI: | 10.1063/1.4898588 | Schools: | School of Electrical and Electronic Engineering School of Physical and Mathematical Sciences |
Rights: | © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4898588 ]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. | Fulltext Permission: | open | Fulltext Availability: | With Fulltext |
Appears in Collections: | EEE Journal Articles SPMS Journal Articles |
Files in This Item:
File | Description | Size | Format | |
---|---|---|---|---|
A hole accelerator for InGaN GaN light-emitting diodes.pdf | 1.06 MB | Adobe PDF | View/Open |
SCOPUSTM
Citations
10
38
Updated on Mar 21, 2024
Web of ScienceTM
Citations
10
34
Updated on Oct 26, 2023
Page view(s) 10
795
Updated on Mar 28, 2024
Download(s) 10
373
Updated on Mar 28, 2024
Google ScholarTM
Check
Altmetric
Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.