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Title: A hole accelerator for InGaN/GaN light-emitting diodes
Authors: Zhang, Zi-Hui
Liu, Wei
Tan, Swee Tiam
Zhang, Yiping
Ji, Yun
Wang, Liancheng
Zhu, Binbin
Lu, Shunpeng
Zhang, Xueliang
Hasanov, Namig
Sun, Xiao Wei
Demir, Hilmi Volkan
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Electric power
Issue Date: 2014
Source: Zhang, Z.-H., Liu, W., Tan, S. T., Ji, Y., Wang, L., Zhu, B., et al. (2014). A hole accelerator for InGaN/GaN light-emitting diodes. Applied Physics Letters, 105(15), 153503-.
Series/Report no.: Applied physics letters
Abstract: The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.
DOI: 10.1063/1.4898588
Rights: © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [ ].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles
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