Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101677
Title: Room temperature magnetic graphene oxide- iron oxide nanocomposite based magnetoresistive random access memory devices via spin-dependent trapping of electrons
Authors: Lin, Aigu L.
Peng, Haiyang
Liu, Zhiqi
Wu, Tom
Su, Chenliang
Loh, Kian Ping
Ariando
Chen, Wei
Wee, Andrew T. S.
Keywords: DRNTU::Science::Chemistry
Issue Date: 2014
Source: Lin, A. L., Peng, H., Liu, Z., Wu, T., Su, C., Loh, K. P., et al. (2014). Room Temperature Magnetic Graphene Oxide- Iron Oxide Nanocomposite Based Magnetoresistive Random Access Memory Devices via Spin-Dependent Trapping of Electrons. Small, 10(10), 1945–1952.
Series/Report no.: Small
Abstract: A MRAM device is fabricated using magnetic graphene oxide- iron oxide nanoparticles nanocomposites together with a platinum electrode and a ferromagnetic cobalt electrode. The device allow for a positive magnetoresistance up to 280% via the spin-dependent trapping of charge carriers. Its low resistance state can be restored by releasing the trapped charges by reversing the direction of current flow together with the magnetic field orientation.
URI: https://hdl.handle.net/10356/101677
http://hdl.handle.net/10220/19751
ISSN: 1613-6810
DOI: 10.1002/smll.201302986
Rights: © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:SPMS Journal Articles

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