Please use this identifier to cite or link to this item:
Title: Recent progress in silicon-based millimeter-wave power amplifier
Authors: Han, Jiang An
Kong, Zhi Hui
Ma, Kaixue
Yeo, Kiat Seng
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Han, J. A., Kong, Z. H., Ma, K., & Yeo, K. S. (2012). Recent progress in silicon-based millimeter-wave power amplifier. 2012 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS), pp.184-187.
Abstract: This paper reports the recent research advancements in silicon-based millimeter-wave solid-state power amplifier (PA). It provides an in-depth overview that facilitates PA designers to select a suitable silicon-based topology based on the vital aspects of process and design technique. The crucial active devices used for fabrication including standard CMOS, CMOS SOI, SiGe BiCMOS and GaN on SiC are introduced. The state-of-the-art architectures for power combining are compared in terms of power delivered, power added efficiency (PAE), bandwidth and reflection coefficient. A major emphasis is placed on the 60 GHz solid-state PAs, as it is the driving force in silicon-based RFIC development.
DOI: 10.1109/APCCAS.2012.6419002
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

Page view(s) 50

Updated on Feb 5, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.