Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101819
Title: Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition
Authors: Ye, Gang
Wang, Hong
Ng, Serene Lay Geok
Ji, Rong
Arulkumaran, Subramaniam
Ng, Geok Ing
Li, Yang
Liu, Zhi Hong
Ang, Kian Siong
Keywords: DRNTU::Science::Physics::Atomic physics
Issue Date: 2014
Source: Ye, G., Wang, H., Ng, S. L. G., Ji, R., Arulkumaran, S., Ng, G. I., et al. (2014). Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition. Applied physics letters, 105(15).
Series/Report no.: Applied physics letters
Abstract: Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaOx layer of ZrO2 grown by atomic layer deposition (ALD) on GaN is studied. ZrO2 films were annealed in N2 atmospheres in temperature range of 300 °C to 700 °C and analyzed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that Ga-O bond to Ga-N bond area ratio decreases in the samples annealed at temperatures lower than 500 °C, which could be attributed to the thinning of GaOx layer associated with low surface defect states due to “clean up” effect of ALD-ZrO2 on GaN. However, further increase in annealing temperature results in deterioration of interface quality, which is evidenced by increase in Ga-O bond to Ga-N bond area ratio and the reduction of Ga-N binding energy.
URI: https://hdl.handle.net/10356/101819
http://hdl.handle.net/10220/24216
DOI: 10.1063/1.4898577
Rights: © 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4898577]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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