Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101822
Title: The effects of surface bond relaxation on electronic structure of Sb2Te3 nano-films by first-principles calculation
Authors: Li, C.
Zhao, Y. F.
Fu, C. X.
Chi, B. Q.
Gong, Y. Y.
Sun, C. Q.
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Nanoelectronics
Issue Date: 2014
Source: Li, C., Zhao, Y. F., Fu, C. X., Chi, B. Q., Gong, Y. Y., & Sun, C. Q. (2014). The effects of surface bond relaxation on electronic structure of Sb2Te3 nano-films by first-principles calculation. AIP Advances, 4(10), 107115-.
Series/Report no.: AIP advances
Abstract: The effects of vertical compressive stress on Sb2Te3 nano-films have been investigated by the first principles calculation, including stability, electronic structure, crystal structure, and bond order. It is found that the band gap of nano-film is sensitive to the stress in Sb2Te3 nano-film and the critical thickness increases under compressive stress. The band gap and band order of Sb2Te3 film has been affected collectively by the surface and internal crystal structures, the contraction ratio between surface bond length of nano-film and the corresponding bond length of bulk decides the band order of Sb2Te3 film.
URI: https://hdl.handle.net/10356/101822
http://hdl.handle.net/10220/24211
ISSN: 2158-3226
DOI: 10.1063/1.4898143
Schools: School of Electrical and Electronic Engineering 
Rights: © 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported license. See: http://creativecommons.org/licenses/by/3.0/.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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