Please use this identifier to cite or link to this item:
Title: A comprehensive review on the progress of lead zirconate-based antiferroelectric materials
Authors: Hao, Xihong
Zhai, Jiwei
Kong, Ling Bing
Xu, Zhengkui
Keywords: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Issue Date: 2014
Source: Hao, X., Zhai, J., Kong, L. B., & Xu, Z. (2014). A comprehensive review on the progress of lead zirconate-based antiferroelectric materials. Progress in materials Science, 63, 1-57.
Series/Report no.: Progress in materials science
Abstract: Lead zirconate (PbZrO3 or PZ)-based antiferroelectric (AFE) materials, as a group of important electronic materials, have attracted increasing attention for their potential applications in high energy storage capacitors, micro-actuators, pyroelectric security sensors, cooling devices, and pulsed power generators and so on, because of their novel external electric field-induced phase switching behavior between AFE state and ferroelectric (FE) state. The performances of AFE materials are strongly dependent on the phase transformation process, which are mainly determined by the constitutions and the external field. For AFE thin/thick films, the electrical properties are also strongly dependent on their thickness, crystal orientation and the characteristics of electrode materials. Accordingly, various strategies have been employed to tailor the phase transformation behavior of AFE materials in order to improve their performances. Due to their relatively poor electrical strength (low breakdown fields), most PZ-based orthorhombic AFE ceramics are broken down before a critical switching field can be applied. As a consequence, the electric-field-induced transition between AFE and FE phase of only those AFE bulk ceramics, with compositions within tetragonal region near the AFE/FE morphotropic phase boundary (MPB), can be realized experimentally at room temperature. AFE materials with such compositions include (Pb,A)ZrO3 (A = Ba, Sr), (Pb1−3/2xLax)(Zr1−yTiy)O3 (PLZT x/(1−y)/y), (Pb0.97La0.02)(Zr,Sn,Ti)O3 (PLZST) and Pb0.99(Zr,Sn,Ti)0.98Nb0.02O3 (PNZST). As compared to bulk ceramics, AFE thin and thick films always display better electric-field endurance ability. Consequently, room temperature electric-field-induced AFE–FE phase transition could be observed in the AFE thin/thick films with orthorhombic structures. Moreover, AFE films are more easily integrated with silicon technologies. Therefore, AFE thin/thick films have been a subject of numerous researches. This review serves to summarize the recent progress of PZ-based AFE materials, focusing on the external field (electric field, hydrostatic pressure and temperature) dependences of the AFE–FE phase transition, with a specific attention to the performances of AFE films for various potential applications, such as high energy storage, electric field induced strains, pyroelectric effect and electrocaloric effect.
ISSN: 0079-6425
DOI: 10.1016/j.pmatsci.2014.01.002
Rights: © 2014 Elsevier Ltd. This is the author created version of a work that has been peer reviewed and accepted for publication by Progress in Materials Science, Elsevier Ltd. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:MSE Journal Articles

Google ScholarTM



Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.