Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101957
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dc.contributor.authorLim, Chee Chongen
dc.contributor.authorYeo, Kiat Sengen
dc.contributor.authorChew, Kok Wai Johnnyen
dc.contributor.authorGu, Jiang Minen
dc.contributor.authorCabuk, Alperen
dc.contributor.authorLim, Suh Feien
dc.contributor.authorBoon, Chirn Chyeen
dc.contributor.authorQiu, Pingen
dc.contributor.authorDo, Manh Anhen
dc.contributor.authorChan, Lapen
dc.date.accessioned2010-05-06T03:25:44Zen
dc.date.accessioned2019-12-06T20:47:21Z-
dc.date.available2010-05-06T03:25:44Zen
dc.date.available2019-12-06T20:47:21Z-
dc.date.copyright2008en
dc.date.issued2008en
dc.identifier.citationLim, C. C., Yeo, K. S., Chew, K. W. J., Gu, J. M., Cabuk, A., Lim, S. F., et al. (2008). High self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFIC. IEEE Electron Device Letters. 29(12), 1376-1379.en
dc.identifier.issn0741-3106en
dc.identifier.urihttps://hdl.handle.net/10356/101957-
dc.description.abstractNovel on-chip multiport symmetrical transformer that has high self-resonant frequency and good area efficiency is presented. This technique involves the unique way of intercrossing the transformer’s primary and secondary coil using multiple metallization layers. A stacked transformer, with the same area utilization as the proposed device, is selected for performance comparison. The proposed design has demonstrated a higher self-resonant frequency in differential transmission line transformer configuration, i.e., fd−SRF(Stacked) = 8 GHz and fd−SRF(Sym) = 10.35 GHz. The structure presented is fully compatible with standard CMOS foundry processes. The silicon data reported in this letter are based on Chartered Semiconductor Manufacturing’s 0.13-μm RFCMOS technology node.en
dc.format.extent4 p.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE electron device lettersen
dc.rights© 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleHigh self-resonant and area efficient monolithic transformer using novel intercoil-crossing structure for silicon RFICen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1109/LED.2008.2006765en
dc.description.versionPublished versionen
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