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|Title:||Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer||Authors:||Yu, S. F.
Leong, Eunice S. P.
Yang, H. Y.
Lau, S. P.
Chen, N. S.
Hng, Huey Hoon
|Keywords:||DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films||Issue Date:||2005||Source:||Yuen, C., Yu, S. F., Leong, E. S. P., Yang, H. Y., Lau, S. P., Chen, N. S., et al. (2005). Low-loss and directional output ZnO thin-film ridge waveguide random lasers with MgO capped layer. Applied Physics Letters, 86(3), 031112-.||Series/Report no.:||Applied physics letters||Abstract:||Room-temperature ultraviolet lasing characteristics of ZnO thin-film ridge-waveguide random lasers with MgO capped layer fabricated on n-type s100d Si substrate are reported. It is demonstrated that highly directional emission from the facets of the random lasers can be achieved. Reduction of scattering loss inside the random cavities can also be obtained. In addition, the improvement in the efficiency of the lasing characteristics of the random lasers by optical feedback is studied.||URI:||https://hdl.handle.net/10356/101962
|DOI:||10.1063/1.1850595||Rights:||© 2005 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at: [DOI: http://dx.doi.org/10.1063/1.1850595]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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