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dc.contributor.authorFung, Stevenson Hon Yuenen
dc.contributor.authorLiu, Yangen
dc.contributor.authorYang, Mingen
dc.contributor.authorWong, Jen Iten
dc.contributor.authorLiu, Yu Chanen
dc.contributor.authorLiu, Zhenen
dc.contributor.authorCen, Zhan Hongen
dc.contributor.authorChen, Tupeien
dc.contributor.authorDing, Liangen
dc.identifier.citationCen, Z. H., Chen, T., Ding, L., Liu, Y., Yang, M., Wong, J. I., et al. (2008). Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix. Applied Physics Letters, 93, 1-3.en
dc.description.abstractOptical properties of implanted Si in a silicon nitride thin film have been determined with spectroscopic ellipsometry based on the Tauc–Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the energy transitions related to the critical point E2. The effect of thermal annealing on the dielectric functions of the implanted Si has been investigated. The analysis of the dielectric functions based on the evolution of the TL parameters can provide an insight into the structural changes in the implanted Si embedded in the Si3N4 matrix caused by the annealing.en
dc.format.extent3 p.en
dc.relation.ispartofseriesApplied physics lettersen
dc.rightsApplied Physics Letters © copyright 2008 American Institute of Physics. The journal's website is located at
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonicsen
dc.titleAnnealing effect on the optical properties of implanted silicon in a silicon nitride matrixen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.organizationA*STAR SIMTechen
dc.description.versionPublished versionen
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