Please use this identifier to cite or link to this item:
Title: Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix
Authors: Fung, Stevenson Hon Yuen
Liu, Yang
Yang, Ming
Wong, Jen It
Liu, Yu Chan
Liu, Zhen
Cen, Zhan Hong
Chen, Tupei
Ding, Liang
Keywords: DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Issue Date: 2008
Source: Cen, Z. H., Chen, T., Ding, L., Liu, Y., Yang, M., Wong, J. I., et al. (2008). Annealing effect on the optical properties of implanted silicon in a silicon nitride matrix. Applied Physics Letters, 93, 1-3.
Series/Report no.: Applied physics letters
Abstract: Optical properties of implanted Si in a silicon nitride thin film have been determined with spectroscopic ellipsometry based on the Tauc–Lorentz (TL) model and the Bruggeman effective medium approximation. It is shown that the suppressed dielectric functions of the implanted Si are dominated by the energy transitions related to the critical point E2. The effect of thermal annealing on the dielectric functions of the implanted Si has been investigated. The analysis of the dielectric functions based on the evolution of the TL parameters can provide an insight into the structural changes in the implanted Si embedded in the Si3N4 matrix caused by the annealing.
ISSN: 0003-6951
DOI: 10.1063/1.2962989
Rights: Applied Physics Letters © copyright 2008 American Institute of Physics. The journal's website is located at
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

Citations 20

Updated on Mar 30, 2023

Web of ScienceTM
Citations 20

Updated on Mar 24, 2023

Page view(s) 5

Updated on Mar 29, 2023

Download(s) 5

Updated on Mar 29, 2023

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.