Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/101982
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dc.contributor.authorYang, Mingen
dc.contributor.authorLiu, Yangen
dc.contributor.authorDing, Liangen
dc.contributor.authorWong, Jen Iten
dc.contributor.authorLiu, Zhenen
dc.contributor.authorZhang, Samen
dc.contributor.authorZhang, Walien
dc.contributor.authorZhu, Fu Rongen
dc.contributor.authorChen, Tupeien
dc.date.accessioned2010-09-06T04:10:05Zen
dc.date.accessioned2019-12-06T20:47:54Z-
dc.date.available2010-09-06T04:10:05Zen
dc.date.available2019-12-06T20:47:54Z-
dc.date.copyright2008en
dc.date.issued2008en
dc.identifier.citationYang, M., Liu, Y., Ding, L., Wong, J. I., Liu, Z., & Zhang, S., et al. (2008). Room-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystals. IEEE Transactions on Electron Devices, 55(12), 3605-3609.en
dc.identifier.issn0018-9383en
dc.identifier.urihttps://hdl.handle.net/10356/101982-
dc.description.abstractIn this brief, room-temperature visible electroluminescence (EL) from aluminum nitride (AlN) thin films containing aluminum nanocrystals (nc-Al) prepared by a radio-frequency magnetron sputtering technique is reported. The EL shows a broad spectrum peaked at 565 nm (2.19 eV) when a negative gate voltage is applied. A linear relationship between the EL and the current transport in the nc-Al/AlN thin film system is observed, and both the current transport and the EL intensity exhibit a power-law dependence on the gate voltage. These results are explained in terms of the formation of percolation networks of tunneling paths by the nc-Al arrays and the radiative recombination of the injected electrons and holes via the deep-level defects at the locations of nc-Al along the tunneling paths.en
dc.format.extent5 p.en
dc.language.isoenen
dc.relation.ispartofseriesIEEE transactions on electron devicesen
dc.rights© 2008 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site..en
dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen
dc.titleRoom-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystalsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1109/TED.2008.2006531en
dc.description.versionPublished versionen
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