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dc.contributor.authorYang, Mingen
dc.contributor.authorLiu, Yangen
dc.contributor.authorDing, Liangen
dc.contributor.authorWong, Jen Iten
dc.contributor.authorLiu, Zhenen
dc.contributor.authorZhang, Samen
dc.contributor.authorZhang, Walien
dc.contributor.authorZhu, Fu Rongen
dc.contributor.authorChen, Tupeien
dc.identifier.citationYang, M., Liu, Y., Ding, L., Wong, J. I., Liu, Z., & Zhang, S., et al. (2008). Room-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystals. IEEE Transactions on Electron Devices, 55(12), 3605-3609.en
dc.description.abstractIn this brief, room-temperature visible electroluminescence (EL) from aluminum nitride (AlN) thin films containing aluminum nanocrystals (nc-Al) prepared by a radio-frequency magnetron sputtering technique is reported. The EL shows a broad spectrum peaked at 565 nm (2.19 eV) when a negative gate voltage is applied. A linear relationship between the EL and the current transport in the nc-Al/AlN thin film system is observed, and both the current transport and the EL intensity exhibit a power-law dependence on the gate voltage. These results are explained in terms of the formation of percolation networks of tunneling paths by the nc-Al arrays and the radiative recombination of the injected electrons and holes via the deep-level defects at the locations of nc-Al along the tunneling paths.en
dc.format.extent5 p.en
dc.relation.ispartofseriesIEEE transactions on electron devicesen
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dc.subjectDRNTU::Engineering::Electrical and electronic engineering::Nanoelectronicsen
dc.titleRoom-temperature visible electroluminescence from aluminum nitride thin film embedded with aluminum nanocrystalsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.description.versionPublished versionen
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