Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102009
Title: Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs
Authors: Gao, Yuan
Ang, Diing Shenp
Young, C. D.
Bersuker, G.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Gao, Y., Ang, D. S., Young, C. D., & Bersuker, G. (2012). Evidence for the transformation of switching hole traps into permanent bulk traps under negative-bias temperature stressing of high-k P-MOSFETs. 2012 IEEE International Reliability Physics Symposium (IRPS), pp.5A.5.1-5A.5.5.
Abstract: Under a given stress field, the recoverable component (R) for HfO2 p-MOSFET appears almost constant at lower temperatures but shows a progressive decrease at higher temperatures. Similar conclusion can also be obtained for HfSiON p-MOSFET. Evidence shows that the decrease in R is due to its transformation into a more permanent form (P). We show that those switching hole traps (SHTs) responsible for the R share the same origin as a portion of bulk traps responsible for the stress induced leakage current (SILC) and 1/f noise of the high-k gate p-MOSFET. When the density of SHTs is constant, no increase in 1/f noise and SILC, i.e. no apparent generation of bulk traps, is observed after NBTI stress. An increase in the SILC and 1/f noise, which implies the generation of bulk traps, is observed when part of these SHTs are transformed into relatively permanent bulk traps, allowing them to be sensed by the slow SILC and 1/f noise measurements.
URI: https://hdl.handle.net/10356/102009
http://hdl.handle.net/10220/16410
DOI: 10.1109/IRPS.2012.6241842
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Conference Papers

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