Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102017
Title: Homogeneous chip to wafer bonding of InP-Al2O3-Si using UV/O3 activation
Authors: Tan, Chuan Seng
Anantha, P.
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2014
Source: Anantha, P., & Tan, C. S. (2014). Homogeneous Chip to Wafer Bonding of InP-Al2O3-Si Using UV/O3 Activation. ECS Journal of Solid State Science and Technology, 3(4), P43-P47.
Series/Report no.: ECS journal of solid state science and technology
Abstract: A direct chip to wafer bonding of indium phosphide (InP) onto silicon using Al2O3 as the intermediate homogenous bonding layer is reported. Intermediate film thickness is varied from 5 to 20 nm and the UV/O3 activation time is optimized to result in minimal surface roughness and contact angle required for effective direct wafer bonding. TEM characterization of the interface reveals a homogeneously fused Al2O3 layer. In addition Al2O3 is shown to best emulate the thermal characteristics of direct InP/Si bonding as compared to using SiO2 as the interfacial bonding layer. Therefore Al2O3 is recognized be a highly competent interfacial layer for chip to wafer bonding for integrated photonic application.
URI: https://hdl.handle.net/10356/102017
http://hdl.handle.net/10220/18857
DOI: 10.1149/2.003404jss
Rights: © 2014 The Electrochemical Society
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

SCOPUSTM   
Citations 20

10
Updated on Jan 23, 2023

Web of ScienceTM
Citations 20

10
Updated on Jan 27, 2023

Page view(s) 5

944
Updated on Jan 29, 2023

Google ScholarTM

Check

Altmetric


Plumx

Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.