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https://hdl.handle.net/10356/102017
Title: | Homogeneous chip to wafer bonding of InP-Al2O3-Si using UV/O3 activation | Authors: | Tan, Chuan Seng Anantha, P. |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2014 | Source: | Anantha, P., & Tan, C. S. (2014). Homogeneous Chip to Wafer Bonding of InP-Al2O3-Si Using UV/O3 Activation. ECS Journal of Solid State Science and Technology, 3(4), P43-P47. | Series/Report no.: | ECS journal of solid state science and technology | Abstract: | A direct chip to wafer bonding of indium phosphide (InP) onto silicon using Al2O3 as the intermediate homogenous bonding layer is reported. Intermediate film thickness is varied from 5 to 20 nm and the UV/O3 activation time is optimized to result in minimal surface roughness and contact angle required for effective direct wafer bonding. TEM characterization of the interface reveals a homogeneously fused Al2O3 layer. In addition Al2O3 is shown to best emulate the thermal characteristics of direct InP/Si bonding as compared to using SiO2 as the interfacial bonding layer. Therefore Al2O3 is recognized be a highly competent interfacial layer for chip to wafer bonding for integrated photonic application. | URI: | https://hdl.handle.net/10356/102017 http://hdl.handle.net/10220/18857 |
DOI: | 10.1149/2.003404jss | Rights: | © 2014 The Electrochemical Society | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
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