Please use this identifier to cite or link to this item:
Title: Complementary logic gate arrays based on carbon nanotube network transistors
Authors: Gao, Pingqi
Zou, Jianping
Li, Hong
Zhang, Kang
Zhang, Qing
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2013
Source: Gao, P., Zou, J., Li, H., Zhang, K., & Zhang, Q. (2013). Complementary logic gate arrays based on carbon nanotube network transistors. Small, 9(6), 813-819.
Series/Report no.: Small
Abstract: An efficient technique of fabricating high performance n- and p- type single-walled carbon nanotube (SWNT) network field-effect transistors (NET-FETs) is successfully demonstrated. Complementary inverters, NOR, NAND, OR, AND logic gates have been achieved from integrating these p- and n-type SWNT-NET-FETs. The processing technique described here is fully compatible with conventional silicon microelectronic technologies and it is readily suitable for scalable integration.
ISSN: 1613-6810
DOI: 10.1002/smll.201201237
Rights: © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

Citations 10

Updated on Sep 6, 2020

Citations 10

Updated on Mar 6, 2021

Page view(s) 20

Updated on Aug 7, 2022

Google ScholarTM




Items in DR-NTU are protected by copyright, with all rights reserved, unless otherwise indicated.