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|Title:||Complementary logic gate arrays based on carbon nanotube network transistors||Authors:||Gao, Pingqi
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2013||Source:||Gao, P., Zou, J., Li, H., Zhang, K., & Zhang, Q. (2013). Complementary logic gate arrays based on carbon nanotube network transistors. Small, 9(6), 813-819.||Series/Report no.:||Small||Abstract:||An efficient technique of fabricating high performance n- and p- type single-walled carbon nanotube (SWNT) network field-effect transistors (NET-FETs) is successfully demonstrated. Complementary inverters, NOR, NAND, OR, AND logic gates have been achieved from integrating these p- and n-type SWNT-NET-FETs. The processing technique described here is fully compatible with conventional silicon microelectronic technologies and it is readily suitable for scalable integration.||URI:||https://hdl.handle.net/10356/102240
|ISSN:||1613-6810||DOI:||10.1002/smll.201201237||Rights:||© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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