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Title: Memory devices using a mixture of MoS2 and graphene oxide as the active layer
Authors: Yin, Zongyou
Zeng, Zhiyuan
Liu, Juqing
He, Qiyuan
Chen, Peng
Zhang, Hua
Keywords: DRNTU::Engineering::Materials
Issue Date: 2013
Source: Yin, Z., Zeng, Z., Liu, J., He, Q., Chen, P., & Zhang, H. (2013). Memory devices using a mixture of MoS2 and graphene oxide as the active layer. Small, 9(5), 727-731.
Series/Report no.: Small
Abstract: A mixed film consisting of 2D MoS2 and graphene oxide (GO) nanosheets is used to fabricate memory devices. The conductive MoS2 component in the MoS2-GO film increases the film conductivity, thus facilitating oxygen migration in GO. The MoS2-GO film-based device exhibits rewritable, nonvolatile, electrical bistable switching with low switching voltage (≤1.5 V) and high ON/OFF current ratio (≈102).
ISSN: 1613-6810
DOI: 10.1002/smll.201201940
Rights: © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:MSE Journal Articles

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