Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102307
Title: Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications
Authors: Vaddi, Ramesh
Kim, Tony Tae-Hyoung
Pott, Vincent
Lin, Julius Tsai Ming
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Vaddi, R., Kim, T. T., Pott, V., & Lin, J. T. M. (2012). Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications. 2012 IEEE International Reliability Physics Symposium (IRPS), pp.ME.3.1-ME.3.6.
Abstract: This paper presents a novel nano-electro-mechanical (NEM) non-volatile memory (NVM) based on an anchorless structure for high operating temperature (>;200°C). The proposed NEM NVM device has two stable mechanical states obtained by adhesion forces, and is actuated by electrostatic forces. This work further discusses the modeling of the NEM memory device and the scaling effects on the device performance. Finally, a memory cell consisting of the NEM memory device and two MOS transistors (1NEM-2T), and NEM NVM array structure are presented.
URI: https://hdl.handle.net/10356/102307
http://hdl.handle.net/10220/16376
DOI: 10.1109/IRPS.2012.6241917
Rights: © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at DOI: [http://dx.doi.org/10.1109/IRPS.2012.6241917].
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Conference Papers

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