Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102307
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dc.contributor.authorVaddi, Rameshen
dc.contributor.authorKim, Tony Tae-Hyoungen
dc.contributor.authorPott, Vincenten
dc.contributor.authorLin, Julius Tsai Mingen
dc.date.accessioned2013-10-10T04:38:43Zen
dc.date.accessioned2019-12-06T20:53:07Z-
dc.date.available2013-10-10T04:38:43Zen
dc.date.available2019-12-06T20:53:07Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.citationVaddi, R., Kim, T. T., Pott, V., & Lin, J. T. M. (2012). Design and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applications. 2012 IEEE International Reliability Physics Symposium (IRPS), pp.ME.3.1-ME.3.6.en
dc.identifier.urihttps://hdl.handle.net/10356/102307-
dc.description.abstractThis paper presents a novel nano-electro-mechanical (NEM) non-volatile memory (NVM) based on an anchorless structure for high operating temperature (>;200°C). The proposed NEM NVM device has two stable mechanical states obtained by adhesion forces, and is actuated by electrostatic forces. This work further discusses the modeling of the NEM memory device and the scaling effects on the device performance. Finally, a memory cell consisting of the NEM memory device and two MOS transistors (1NEM-2T), and NEM NVM array structure are presented.en
dc.language.isoenen
dc.rights© 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at DOI: [http://dx.doi.org/10.1109/IRPS.2012.6241917].en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleDesign and analysis of anchorless shuttle nano-electro-mechanical non-volatile memory for high temperature applicationsen
dc.typeConference Paperen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.contributor.conferenceIEEE International Reliability Physics Symposium (2012 : Anaheim, California, US)en
dc.identifier.doi10.1109/IRPS.2012.6241917en
dc.description.versionAccepted versionen
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