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|Title:||Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film||Authors:||Chen, Tupei
Li, X. D.
Wong, J. I.
Leong, K. C.
|Keywords:||DRNTU::Science::Physics||Issue Date:||2014||Source:||Liu, P., Chen, T., Li, X. D., Liu, Z., Wong, J. I., Liu, Y., et al. (2014). Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film. Applied Physics Letters, 104(3), 033505-.||Series/Report no.:||Applied physics letters||Abstract:||A write-once-read-many-times (WORM) memory devices based on O2 plasma-treated indium gallium zinc oxide (IGZO) thin films has been demonstrated. The device has a simple Al/IGZO/Al structure. The device has a normally OFF state with a very high resistance (e.g., the resistance at 2 V is ∼109 Ω for a device with the radius of 50 μm) as a result of the O2 plasma treatment on the IGZO thin films. The device could be switched to an ON state with a low resistance (e.g., the resistance at 2 V is ∼103 Ω for the radius of 50 μm) by applying a voltage pulse (e.g., 10 V/1 μs). The WORM device has good data-retention and reading-endurance capabilities.||URI:||https://hdl.handle.net/10356/102339
|DOI:||10.1063/1.4862972||Rights:||© 2014 AIP Publishing LLC. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of AIP Publishing LLC. The paper can be found at the following official DOI: [http://dx.doi.org/10.1063/1.4862972]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.||Fulltext Permission:||open||Fulltext Availability:||With Fulltext|
|Appears in Collections:||EEE Journal Articles|
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