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Title: Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures
Authors: Wu, Shuxiang
Luo, Xin
Turner, Stuart
Peng, Haiyang
Lin, Weinan
Ding, Junfeng
David, Adrian
Wang, Biao
Van Tendeloo, Gustaaf
Wang, Junling
Wu, Tom
Keywords: DRNTU::Engineering::Materials
Issue Date: 2013
Source: Wu, S., Luo, X., Turner, S., Peng, H., Lin, W., Ding, J., et al. (2013). Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures. Physical Review X, 3(4), 041027-.
Series/Report no.: Physical Review X
Abstract: Resistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.
ISSN: 2160-3308
DOI: 10.1103/PhysRevX.3.041027
Rights: © 2013 American Physical Society. This paper was published in Physical Review X and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following official DOI: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
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