Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102427
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dc.contributor.authorWu, Shuxiangen
dc.contributor.authorLuo, Xinen
dc.contributor.authorTurner, Stuarten
dc.contributor.authorPeng, Haiyangen
dc.contributor.authorLin, Weinanen
dc.contributor.authorDing, Junfengen
dc.contributor.authorDavid, Adrianen
dc.contributor.authorWang, Biaoen
dc.contributor.authorVan Tendeloo, Gustaafen
dc.contributor.authorWang, Junlingen
dc.contributor.authorWu, Tomen
dc.date.accessioned2014-03-27T05:39:52Zen
dc.date.accessioned2019-12-06T20:54:47Z-
dc.date.available2014-03-27T05:39:52Zen
dc.date.available2019-12-06T20:54:47Z-
dc.date.copyright2013en
dc.date.issued2013en
dc.identifier.citationWu, S., Luo, X., Turner, S., Peng, H., Lin, W., Ding, J., et al. (2013). Nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures. Physical Review X, 3(4), 041027-.en
dc.identifier.issn2160-3308en
dc.identifier.urihttps://hdl.handle.net/10356/102427-
dc.identifier.urihttp://hdl.handle.net/10220/18987en
dc.description.abstractResistive switching heterojunctions, which are promising for nonvolatile memory applications, usually share a capacitorlike metal-oxide-metal configuration. Here, we report on the nonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructures, where the conducting layer near the LaAlO3/SrTiO3 interface serves as the “unconventional” bottom electrode although both oxides are band insulators. Interestingly, the switching between low-resistance and high-resistance states is accompanied by reversible transitions between tunneling and Ohmic characteristics in the current transport perpendicular to the planes of the heterojunctions. We propose that the observed resistive switching is likely caused by the electric-field-induced drift of charged oxygen vacancies across the LaAlO3/SrTiO3 interface and the creation of defect-induced gap states within the ultrathin LaAlO3 layer. These metal-oxide-oxide heterojunctions with atomically smooth interfaces and defect-controlled transport provide a platform for the development of nonvolatile oxide nanoelectronics that integrate logic and memory devices.en
dc.language.isoenen
dc.relation.ispartofseriesPhysical Review Xen
dc.rights© 2013 American Physical Society. This paper was published in Physical Review X and is made available as an electronic reprint (preprint) with permission of American Physical Society. The paper can be found at the following official DOI: [http://dx.doi.org/10.1103/PhysRevX.3.041027]. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.en
dc.subjectDRNTU::Engineering::Materialsen
dc.titleNonvolatile resistive switching in Pt/LaAlO3/SrTiO3 heterostructuresen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science and Engineeringen
dc.contributor.schoolSchool of Physical and Mathematical Sciencesen
dc.identifier.doi10.1103/PhysRevX.3.041027en
dc.description.versionPublished versionen
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