Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102542
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dc.contributor.authorLau, W. S.en
dc.contributor.authorYang, Peizhen.en
dc.contributor.authorSiah, S. Y.en
dc.contributor.authorChan, L.en
dc.date.accessioned2013-07-12T03:46:45Zen
dc.date.accessioned2019-12-06T20:56:45Z-
dc.date.available2013-07-12T03:46:45Zen
dc.date.available2019-12-06T20:56:45Z-
dc.date.copyright2012en
dc.date.issued2012en
dc.identifier.urihttps://hdl.handle.net/10356/102542-
dc.description.abstractMechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechanical sensor can be significantly improved by simply monitoring the gate-induced-drain leakage (GIDL) current of an n-channel MOS transistor. The role of a tensile mechanical stress bias will also be discussed.en
dc.language.isoenen
dc.relation.ispartofseriesMicroelectronics reliabilityen
dc.rights© 2012 Elsevier Ltd.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleThe role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage currenten
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
dc.identifier.doi10.1016/j.microrel.2012.06.111en
item.fulltextNo Fulltext-
item.grantfulltextnone-
Appears in Collections:EEE Journal Articles

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