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|Title:||The role of a tensile stress bias for a sensitive silicon mechanical stress sensor based on a change in gate-induced-drain leakage current||Authors:||Lau, W. S.
Siah, S. Y.
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Series/Report no.:||Microelectronics reliability||Abstract:||Mechanical stress sensors based on silicon piezoresistance have limited sensitivity. Mechanical stress sensors based on the on-current or off-current or threshold voltage of silicon MOS transistors also have limited sensitivity. In this paper, we report that the sensitivity of a silicon-based mechanical sensor can be significantly improved by simply monitoring the gate-induced-drain leakage (GIDL) current of an n-channel MOS transistor. The role of a tensile mechanical stress bias will also be discussed.||URI:||https://hdl.handle.net/10356/102542
|DOI:||10.1016/j.microrel.2012.06.111||Rights:||© 2012 Elsevier Ltd.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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