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https://hdl.handle.net/10356/102562| Title: | Sericin for resistance switching device with multilevel nonvolatile memory | Authors: | Wang, Hong Meng, Fanben Cai, Yurong Zheng, Liyan Li, Yuangang Liu, Yuanjun Jiang, Yueyue Wang, Xiaotian Chen, Xiaodong |
Keywords: | DRNTU::Engineering::Materials | Issue Date: | 2013 | Source: | Wang, H., Meng, F., Cai, Y., Zheng, L., Li, Y., Liu, Y., et al. (2013). Sericin for resistance switching device with multilevel nonvolatile memory. Advanced Materials, 25(38), 5498-5503. | Series/Report no.: | Advanced materials | Abstract: | Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development. | URI: | https://hdl.handle.net/10356/102562 http://hdl.handle.net/10220/19101 |
ISSN: | 0935-9648 | DOI: | 10.1002/adma.201301983 | Schools: | School of Materials Science & Engineering | Rights: | © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
| Appears in Collections: | MSE Journal Articles |
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