Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102562
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dc.contributor.authorWang, Hongen
dc.contributor.authorMeng, Fanbenen
dc.contributor.authorCai, Yurongen
dc.contributor.authorZheng, Liyanen
dc.contributor.authorLi, Yuangangen
dc.contributor.authorLiu, Yuanjunen
dc.contributor.authorJiang, Yueyueen
dc.contributor.authorWang, Xiaotianen
dc.contributor.authorChen, Xiaodongen
dc.date.accessioned2014-04-04T06:10:28Zen
dc.date.accessioned2019-12-06T20:56:58Z-
dc.date.available2014-04-04T06:10:28Zen
dc.date.available2019-12-06T20:56:58Z-
dc.date.copyright2013en
dc.date.issued2013en
dc.identifier.citationWang, H., Meng, F., Cai, Y., Zheng, L., Li, Y., Liu, Y., et al. (2013). Sericin for resistance switching device with multilevel nonvolatile memory. Advanced Materials, 25(38), 5498-5503.en
dc.identifier.issn0935-9648en
dc.identifier.urihttps://hdl.handle.net/10356/102562-
dc.description.abstractResistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.en
dc.language.isoenen
dc.relation.ispartofseriesAdvanced materialsen
dc.rights© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.subjectDRNTU::Engineering::Materialsen
dc.titleSericin for resistance switching device with multilevel nonvolatile memoryen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Materials Science & Engineeringen
dc.identifier.doi10.1002/adma.201301983en
item.grantfulltextnone-
item.fulltextNo Fulltext-
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