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Title: Thermal stability of germanium-tin (GeSn) fins
Authors: Lei, Dian
Lee, Kwang Hong
Bao, Shuyu
Wang, Wei
Masudy-Panah, Saeid
Tan, Chuan Seng
Tok, Eng Soon
Gong, Xiao
Yeo, Yee-Chia
Keywords: Crystallography
Surface And Interface Chemistry
DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2017
Source: Lei, D., Lee, K. H., Bao, S., Wang, W., Masudy-Panah, S., Tan, C. S., Tok, E. S., et al. (2017). Thermal stability of germanium-tin (GeSn) fins. Applied Physics Letters, 111(25), 252103-. doi:10.1063/1.5006994
Series/Report no.: Applied Physics Letters
Abstract: We investigate the thermal stability of germanium-tin (Ge1−xSnx) fins under rapid thermal annealing in N2 ambient. The Ge1−xSnx fins were formed on a GeSn-on-insulator substrate and were found to be less thermally stable than blanket Ge1−xSnx films. The morphology change and material quality of the annealed Ge1−xSnx fin are investigated using scanning electron microscopy, Raman spectroscopy, high-resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and electron energy loss spectroscopy. Obvious degradation of crystalline quality of the Ge0.96Sn0.04 fin was observed, and a thin Ge layer was formed on the SiO2 surface near the Ge0.96Sn0.04 fin region after 500 °C anneal. A model was proposed to explain the morphology change of the Ge0.96Sn0.04 fin.
ISSN: 0003-6951
DOI: 10.1063/1.5006994
Rights: © 2017 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The published version is available at: []. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law.
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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