Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102668
Title: A 0.044-mm2 0.5-to-7-GHz resistor-plus-source-follower-feedback noise-cancelling LNA achieving a flat NF of 3.3±0.45 dB
Authors: Yu, Haohong
Chen, Yong
Boon, Chirn Chye
Li, Chenyang
Mak, Pui-In
Martins, Rui P.
Keywords: Noise Cancelling
CMOS
Engineering::Electrical and electronic engineering
Issue Date: 2019
Source: Yu, H., Chen, Y., Boon, C. C., Li, C., Mak, P.-I., & Martins, R. P. (2019). A 0.044-mm2 0.5-to-7-GHz resistor-plus-source-follower-feedback noise-cancelling LNA achieving a flat NF of 3.3±0.45 dB. IEEE Transactions on Circuits and Systems II: Express Briefs, 66(1), 71-75. doi:10.1109/TCSII.2018.2833553
Series/Report no.: IEEE Transactions on Circuits and Systems II: Express Briefs
Abstract: A wideband noise-cancelling low-noise amplifier (LNA) combining resistor feedback and source-follower feedback (SFF) is proposed. The SFF facilitates upsizing of the feedback resistor to improve the gain and noise figure (NF), without compromising the input-impedance matching. Another benefit is that the noise contributions of both the feedback resistor and noise-cancelling transistors are significantly reduced. Fabricated in 65-nm CMOS, the LNA exhibits a voltage gain of 16.8 dB, and a flat NF of 3.3 ± 0.45 dB over a −3-dB bandwidth of 0.5 to 7 GHz. The power consumption is 11.3 mW at 1.2 V, and the die area is 0.044 mm2
URI: https://hdl.handle.net/10356/102668
http://hdl.handle.net/10220/50205
ISSN: 1549-7747
DOI: 10.1109/TCSII.2018.2833553
Schools: School of Electrical and Electronic Engineering 
Research Centres: Singapore-MIT Alliance Programme 
Rights: © 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at: https://doi.org//10.1109/TCSII.2018.2833553
Fulltext Permission: open
Fulltext Availability: With Fulltext
Appears in Collections:EEE Journal Articles

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