Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102699
Title: Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds
Authors: Tan, Chuan Seng
Peng, Lan
Fan, Ji
Li, Hong Yu
Gao, Shan
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Tan, C. S., Peng, L., Fan, J., Li, H., & Gao, S. (2012). Three-Dimensional Wafer Stacking Using Cu–Cu Bonding for Simultaneous Formation of Electrical, Mechanical, and Hermetic Bonds. IEEE Transactions on Device and Materials Reliability, 12(2), 194-200.
Series/Report no.: IEEE transactions on device and materials reliability
Abstract: Wafer-on-wafer stacking is demonstrated successfully using bumpless Cu-Cu bonding for the simultaneous formation of electrical connection, mechanical support, and hermetic frame for 3-D IC application. The ohmic behavior of the Cu-Cu bond is verified. A daisy chain of at least 44 000 contacts at a 15-μm pitch is connected successfully and sustains thermal cycling. Postbonding delamination is found to be strongly affected by the wafer curvature and bond strength. The Cu-Cu hermetic seal ring shows a helium leak rate more than ten times lower than the reject limit (5 × 10-8 atm · cm/s based on MIL-STD-883E standard) without underfill. This provides a robust IC-to-IC connection density of 4.4 × 105 cm-2, suitable for future wafer-level 3-D integration.
URI: https://hdl.handle.net/10356/102699
http://hdl.handle.net/10220/16479
DOI: 10.1109/TDMR.2012.2188802
Rights: © 2012 IEEE.
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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