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dc.contributor.authorTan, Chuan Sengen
dc.contributor.authorPeng, Lanen
dc.contributor.authorFan, Jien
dc.contributor.authorLi, Hong Yuen
dc.contributor.authorGao, Shanen
dc.identifier.citationTan, C. S., Peng, L., Fan, J., Li, H., & Gao, S. (2012). Three-Dimensional Wafer Stacking Using Cu–Cu Bonding for Simultaneous Formation of Electrical, Mechanical, and Hermetic Bonds. IEEE Transactions on Device and Materials Reliability, 12(2), 194-200.en
dc.description.abstractWafer-on-wafer stacking is demonstrated successfully using bumpless Cu-Cu bonding for the simultaneous formation of electrical connection, mechanical support, and hermetic frame for 3-D IC application. The ohmic behavior of the Cu-Cu bond is verified. A daisy chain of at least 44 000 contacts at a 15-μm pitch is connected successfully and sustains thermal cycling. Postbonding delamination is found to be strongly affected by the wafer curvature and bond strength. The Cu-Cu hermetic seal ring shows a helium leak rate more than ten times lower than the reject limit (5 × 10-8 atm · cm/s based on MIL-STD-883E standard) without underfill. This provides a robust IC-to-IC connection density of 4.4 × 105 cm-2, suitable for future wafer-level 3-D integration.en
dc.relation.ispartofseriesIEEE transactions on device and materials reliabilityen
dc.rights© 2012 IEEE.en
dc.subjectDRNTU::Engineering::Electrical and electronic engineeringen
dc.titleThree-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bondsen
dc.typeJournal Articleen
dc.contributor.schoolSchool of Electrical and Electronic Engineeringen
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