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|Title:||Three-dimensional wafer stacking using Cu–Cu bonding for simultaneous formation of electrical, mechanical, and hermetic bonds||Authors:||Tan, Chuan Seng
Li, Hong Yu
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Tan, C. S., Peng, L., Fan, J., Li, H., & Gao, S. (2012). Three-Dimensional Wafer Stacking Using Cu–Cu Bonding for Simultaneous Formation of Electrical, Mechanical, and Hermetic Bonds. IEEE Transactions on Device and Materials Reliability, 12(2), 194-200.||Series/Report no.:||IEEE transactions on device and materials reliability||Abstract:||Wafer-on-wafer stacking is demonstrated successfully using bumpless Cu-Cu bonding for the simultaneous formation of electrical connection, mechanical support, and hermetic frame for 3-D IC application. The ohmic behavior of the Cu-Cu bond is verified. A daisy chain of at least 44 000 contacts at a 15-μm pitch is connected successfully and sustains thermal cycling. Postbonding delamination is found to be strongly affected by the wafer curvature and bond strength. The Cu-Cu hermetic seal ring shows a helium leak rate more than ten times lower than the reject limit (5 × 10-8 atm · cm/s based on MIL-STD-883E standard) without underfill. This provides a robust IC-to-IC connection density of 4.4 × 105 cm-2, suitable for future wafer-level 3-D integration.||URI:||https://hdl.handle.net/10356/102699
|DOI:||10.1109/TDMR.2012.2188802||Rights:||© 2012 IEEE.||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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