Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102738
Title: A D-band cascode amplifier with 24.3 dB gain and 7.7 dBm output power in 0.13 μm SiGe BiCMOS technology
Authors: Hou, Debin
Xiong, Yong-Zhong
Goh, Wang Ling
Hong, Wei
Madihian, Mohammad
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Hou, D., Xiong, Y. Z., Goh, W. L., Hong, W., & Madihian, M. (2012). A D-band cascode amplifier with 24.3 dB gain and 7.7 dBm output power in 0.13 μm SiGe BiCMOS technology. IEEE microwave and wireless components letters, 22(4), 191-193.
Series/Report no.: IEEE microwave and wireless components letters
Abstract: This letter describes a D-band 3-stage cascode amplifier developed using the IHP 0.13 μm SiGe BiCMOS technology. The amplifier is implemented with low-loss transformer for inter-stage matching and single-to-differential transformation. The large-signal characteristics of the cascode HBT configuration are used to optimize the bias condition for highest output power and gain performance. A measured amplifier achieves a peak power gain of 24.3 dB, with a 3 dB bandwidth of 20 GHz centered at 130 GHz. The amplifier exhibits a saturated output power of 7.7 dBm and an output 1 dB gain compression point of 6 dBm with a power consumption of 84 mW. The measured noise figure is 6.8 dB at 130 GHz and stays under 8 dB over the 3 dB bandwidth. To the best of our knowledge, the proposed amplifier exhibits the highest gain and output power among the silicon-based D-band amplifiers reported so far.
URI: https://hdl.handle.net/10356/102738
http://hdl.handle.net/10220/16411
ISSN: 1531-1309
DOI: 10.1109/LMWC.2012.2188624
Rights: © 2012 IEEE
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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