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|Title:||A D-band cascode amplifier with 24.3 dB gain and 7.7 dBm output power in 0.13 μm SiGe BiCMOS technology||Authors:||Hou, Debin
Goh, Wang Ling
|Keywords:||DRNTU::Engineering::Electrical and electronic engineering||Issue Date:||2012||Source:||Hou, D., Xiong, Y. Z., Goh, W. L., Hong, W., & Madihian, M. (2012). A D-band cascode amplifier with 24.3 dB gain and 7.7 dBm output power in 0.13 μm SiGe BiCMOS technology. IEEE microwave and wireless components letters, 22(4), 191-193.||Series/Report no.:||IEEE microwave and wireless components letters||Abstract:||This letter describes a D-band 3-stage cascode amplifier developed using the IHP 0.13 μm SiGe BiCMOS technology. The amplifier is implemented with low-loss transformer for inter-stage matching and single-to-differential transformation. The large-signal characteristics of the cascode HBT configuration are used to optimize the bias condition for highest output power and gain performance. A measured amplifier achieves a peak power gain of 24.3 dB, with a 3 dB bandwidth of 20 GHz centered at 130 GHz. The amplifier exhibits a saturated output power of 7.7 dBm and an output 1 dB gain compression point of 6 dBm with a power consumption of 84 mW. The measured noise figure is 6.8 dB at 130 GHz and stays under 8 dB over the 3 dB bandwidth. To the best of our knowledge, the proposed amplifier exhibits the highest gain and output power among the silicon-based D-band amplifiers reported so far.||URI:||https://hdl.handle.net/10356/102738
|ISSN:||1531-1309||DOI:||10.1109/LMWC.2012.2188624||Rights:||© 2012 IEEE||Fulltext Permission:||none||Fulltext Availability:||No Fulltext|
|Appears in Collections:||EEE Journal Articles|
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