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https://hdl.handle.net/10356/102793
Title: | Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection | Authors: | Wei, J. Liu, W. J. Fang, Z. Wang, Z. R. Wang, F. Wu, L. Zhang, J. F. Zhu, H. L. Sun, Xiaowei Tran, Xuan Anh Yu, Hongyu |
Keywords: | DRNTU::Engineering::Electrical and electronic engineering | Issue Date: | 2012 | Source: | Liu, W. J., Sun, X., Tran, X. A., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., & Yu, H. (2012). Vth shift in single-layer graphene field-effect transistors and its correlation with raman inspection. IEEE transactions on device and materials reliability, 12(2), 478-481. | Series/Report no.: | IEEE transactions on device and materials reliability | Abstract: | Raman measurement is carried out to understand Vth shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding ΔVth during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (H2/Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased ΔVth for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs. | URI: | https://hdl.handle.net/10356/102793 http://hdl.handle.net/10220/16505 |
DOI: | 10.1109/TDMR.2012.2190414 | Schools: | School of Electrical and Electronic Engineering | Organisations: | A*STAR SIMTech | Fulltext Permission: | none | Fulltext Availability: | No Fulltext |
Appears in Collections: | EEE Journal Articles |
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