Please use this identifier to cite or link to this item: https://hdl.handle.net/10356/102793
Title: Vth shift in single-layer graphene field-effect transistors and its correlation with Raman inspection
Authors: Wei, J.
Liu, W. J.
Fang, Z.
Wang, Z. R.
Wang, F.
Wu, L.
Zhang, J. F.
Zhu, H. L.
Sun, Xiaowei
Tran, Xuan Anh
Yu, Hongyu
Keywords: DRNTU::Engineering::Electrical and electronic engineering
Issue Date: 2012
Source: Liu, W. J., Sun, X., Tran, X. A., Fang, Z., Wang, Z. R., Wang, F., Wu, L., Zhang, J. F., Wei, J., Zhu, H. L., & Yu, H. (2012). Vth shift in single-layer graphene field-effect transistors and its correlation with raman inspection. IEEE transactions on device and materials reliability, 12(2), 478-481.
Series/Report no.: IEEE transactions on device and materials reliability
Abstract: Raman measurement is carried out to understand Vth shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding ΔVth during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (H2/Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased ΔVth for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs.
URI: https://hdl.handle.net/10356/102793
http://hdl.handle.net/10220/16505
DOI: 10.1109/TDMR.2012.2190414
Fulltext Permission: none
Fulltext Availability: No Fulltext
Appears in Collections:EEE Journal Articles

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